polyzen polymer enhanced zener diode micro-assemblies over-voltage circuit protection products product: ZEN132V130A24CE document: scd28168 rev letter: a rev date: june 08, 2012 page no.: 1 of 8 specification status: released general description te circuit protection polyzen devices are polymer enhanced, precision zener diode micro-assemblies. they offer resettable protection against multi-watt fault events without the need for multi-watt heat sinks. the zener diode used for voltage clamping in a polyzen micro- assembly was selected due to its relatively flat voltage vs current response. this helps improve output voltage clamping, even when input voltage is high and diode currents are large. an advanced feature of the polyz en micro-assembly is that the zener diode is thermally coupled to a resistively non-linear, polymer ptc (positive temperature coefficient) layer. this ptc layer is fully integrated into t he device, and is electrically in series between v in and the diode clamped v out . this advanced ptc layer responds to either extended diode heating or overcurrent events by transitioning from a low to high resistance state, also known as ?tripping?. a tripped ptc will limit current and generate voltage drop. it helps to protect both the zener diode and the follow-on electronics and effectively increases the diode?s power handling capability. the polymer enhanced zener diode helps protect sensitive portable electronics from damage caused by inductive voltage spikes, voltage transients, incorrect power supplies and reverse bias. these devices are particularly suitable for portable electronics and other low-power dc devices. benefits ? stable zener diode helps shield downstream electronics from overvoltage and reverse bias ? trip events shut out overvoltage and reverse bias sources ? analog nature of trip ev ents minimizes upstream inductive spikes ? minimal power dissipation requirements ? single component placement features ? overvoltage transient suppression ? stable v z vs fault current ? time delayed, overvoltage trip ? time delayed, reverse bias trip ? multi-watt power handling capability ? integrated device construction ? rohs compliant target applications ? dc power port protection in portable electronics ? dc power port protection for systems using barrel jacks for power input ? internal overvoltage & transient suppression ? dc output voltage regulation ? tablet pcs and portable electronics typical application block diagram gnd v in v out regulated output r load protected downstream electronics 1 2 3 + power supply (external or internal) polyzen protected electronics polyzen device gnd v in v out regulated output r load protected downstream electronics 1 2 3 + power supply (external or internal) polyzen protected electronics gnd v in v out regulated output r load protected downstream electronics 1 2 3 + power supply (external or internal) polyzen protected electronics polyzen device
polyzen polymer enhanced zener diode micro-assemblies over-voltage circuit protection products product: ZEN132V130A24CE document: scd28168 rev letter: a rev date: june 08, 2012 page no.: 2 of 8 configuration information pin configuration (top view) block diagram pin description pin number pin name pin function 1 v in v in . protected input to zener diode 2 gnd gnd 3 v out v out . zener regulated voltage output mechanical dimmensions min typ max (mm) length l 4.8 5.0 5.2 width w 3.8 4.0 4.2 height h 0.8 1.0 1.2 dimension a 0.7 0.8 0.9 b(2x) 0.9 1.0 1.1 c 3.9 4.05 4.2 t(2x) 0.1 0.2 0.3 1 v in gnd 2 1 v out 3 2 gnd v in v out zener diode polymer ptc gnd v in v out zener diode polymer ptc
polyzen polymer enhanced zener diode micro-assemblies over-voltage circuit protection products product: ZEN132V130A24CE document: scd28168 rev letter: a rev date: june 08, 2012 page no.: 3 of 8 definition of terms i ptc current flowing through the ptc portion of the circuit i flt rms fault current flowing through the diode i out current flowing out the v out pin of the device trip event a condition where the ptc transitions to a high resistance state, thereby significantly limiting i ptc and related currents. trip endurance time the ptc portion of the device remains in a high resistance state. general specifications operating temperature -40o to +85oc storage temperature -40o to +85oc typical electrical characteristics 1-3, 11 (typical unless otherwise specified) min typ max test voltage (v) max current (ma) v int max (v) test current (a) i flt max (a) test voltage (v) pow e r (w) test voltage (v) 13.20 13.40 13.65 0.1 13.15 5.0 0.070 0.105 24 3 +3 -40 +24 -16 124 i hold 5 (a) @ 20 o c leakage current 1.3 r1 ma x 7 (ohms) r typ 6 (ohms) v int max 8 i flt max 9 tripped pow er dis s ip at io n 10 v z 4 (v) i zt 4 (a) note 1: electrical characteristics det ermined at 25oc unless otherwise specified. note 2: this device is intended for limited fault protection. re peated trip events or extended trip endurance can degrade the d evice and may affect performance to specifications. performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit des ign. for details or ratings specific to your application cont act te connectivity circuit protection division directly. note 3: specifications developed using 1. 0 ounce 0.045? wide copper traces on dedicat ed fr4 test boards. performance in your application may vary. note 4: i zt is the current at which v z is measured (v z = v out ). additional v z values are available on request. note 5: i hold : maximum steady state i ptc (current entering or exiting the v in pin of the device) that will no t generate a trip event at the specified temperature. specification assumes i flt (current flowing through the zener diode) is sufficiently low so as to prevent the diode from acting as a heat source. testing is conducted with an ?open? zener. note 6: r typ: resistance between v in and v out pins during normal operati on at room temperature. note 7: r 1max : the maximum resistance between v in and v out pins at room temperature, one hour after first tripped event or after reflow soldering. note 8: v int max: v int max is defined as the voltage at wh ich typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24 hours trip en durance at the specifie d voltage and current (i ptc ). v int max testing is conducted using a "shorted" load (v out = 0 v). v int max is a survivability rating, not a performance rating. for performance ratings, see note 2. note 9: i flt max: maximum rms fault current the diode portion of the device can withstand and remain resettable. specification is dependent on the direction of current flow through the diode. rms fault currents above i flt max may permanently damage the polyzen device. specification assumes i out = 0. testing conducted with no load connected to v out. note 10: the power dissipated by the device when in the ?t ripped? state, as measured on te test boards (see note 3). note 11: specifications based on limite d qualification data and subject to change. gnd i flt v in i out i ptc , i hold v out gnd i flt v in i out i ptc , i hold v out
polyzen polymer enhanced zener diode micro-assemblies over-voltage circuit protection products product: ZEN132V130A24CE document: scd28168 rev letter: a rev date: june 08, 2012 page no.: 4 of 8 typical device characteristics
polyzen polymer enhanced zener diode micro-assemblies over-voltage circuit protection products product: ZEN132V130A24CE document: scd28168 rev letter: a rev date: june 08, 2012 page no.: 5 of 8
polyzen polymer enhanced zener diode micro-assemblies over-voltage circuit protection products product: ZEN132V130A24CE document: scd28168 rev letter: a rev date: june 08, 2012 page no.: 6 of 8 recommended pad layout (mm) recommended solder stencil (mm) recommended solder reflow profile classification reflow profiles profile feature pb-free assembly average ramp-up rate (ts max to tp) 3 c/second max average ramp-down rate (tp to t l ) 6 c/second max preheat ? temperature min (ts min) 150 c ? temperature max (ts max) 200 c ? time (ts preheat) 60- 180 sec onds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60- 150 sec onds peak / classification temperature ? temperature (t p ) 260 c time within 5 c of actual peak ? time (t p ) 20- 40 sec onds time 25 c to peak temperature 8 minutes max solder thickness ? 0.15mm
polyzen polymer enhanced zener diode micro-assemblies over-voltage circuit protection products product: ZEN132V130A24CE document: scd28168 rev letter: a rev date: june 08, 2012 page no.: 7 of 8 packaging packaging tape & reel standard box ZEN132V130A24CE 4,000 20,000 reel dimension tape dimensions a max = 330 n min = 102 w 1 = 8.4 w 2 = 11.1 matte finish these area a max n min matte finish these area a max n min
polyzen polymer enhanced zener diode micro-assemblies over-voltage circuit protection products product: ZEN132V130A24CE document: scd28168 rev letter: a rev date: june 08, 2012 page no.: 8 of 8 device markings information materials information rohs compliant elv comp liant halogen free* * halogen free refers to: br 900ppm, cl 900ppm, br+cl 1500ppm. all information, including illustrations, is believed to be accu rate and reliable. users, however, should independently evaluat e the suitability of and test each product selected for their application. tyco electronics corporation and/or its affiliates in the te connectivity ltd. family of companies (?te?) makes no warranties as to the a ccuracy or completeness of the information, and disclaims any li ability regarding its use. te?s only obligations ar e those in the te standard terms and conditions of sale and in no case will te be li able for any incidental, indirect, or consequential dam ages arising from the sale, resale, use, or misuse of its products. specification s are subject to change without notice. in addition, te reserves the right to make changes to materials or pr ocessing that do not affect comp liance with any applicable specification wit hout notification to buyer. wit hout express written consent by an officer of te, te does not au thorize the use of any of its products as components in nuclear facility app lications, aerospace, or in critical life support devices or sy stems. ? 2012 tyco electronics corporation, a te conn ectivity ltd. company. all rights reserved. hf
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